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(ELEC102)test2_pastm.pdf
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Given VT =1V
K = 0.25mA/V2

2

Find VDSand IDSfor VG = 3.5V






Text Box: If MOS is in saturation mode

Text Box: NMOS in saturation is confirmed since1. VGS = 3.5V > VT 2. VDS = 4.875V > VGS - VT

4



5

(26)



Text Box: GivenVT = 1VK = 0.5mA/V2

Text Box: hence Vo = 3 + 1 = 4V Vo = 13 V = VDD is impossible since MOS is not cut off (VDGS > VT)
Text Box: NMOS is in triode since1. VGS > VT 2. VDS < VGS - VT
Text Box: 5. In the circuit, find VO . State clearly the reasons for your answer. Given VT = 1V, K = 0.5mA/V2 . Given th
Text Box: NMOS is triode since1. 6 > 12. 1 < 6 - 1



8


Text Box: 8. A BJT with the following IC-VCE characteristics is used in the following circuit. (a) Sketch the load line VCE



(8)

(34)




Text Box: Q
Text Box: Estimate current and voltage gain

vout= vCE

vin

RB

RC

(15)







Text Box: 10k..
Text Box: c

9

(30)

1k.

10V

1k.

1.57m

8V

5.73m

5.83V

4.16m

Text Box: 9. Given the BJT circuit.Given that IB is about 1.57mA. Show that the BJT is in saturation. Hence show that the fo










Hence V3 = -16V

11

-2V

D

+ V3 -

(15)



Text Box: V2

Text Box: 11. (a) In the ideal diode circuit, find V3 and sketch V2(t). (15)
Text Box: Hence V2 = V1 + V3 = V1 - 16V
Text Box: 14V



(20)

(6)

11




Text Box: Vi > 5V, D1 and D2 ON,
Text Box: (b) In the ideal diode circuit, plot Vo versus Vi for -10V .TVi .T 10V. Show clearly all voltages in your sketch.

Text Box: Vi < 5V, D1 OFF and D2 ON



VZO = 7V

rZ = 5.

12

(35)